SKM195GAL062D IGBT Transistor

The SKM195GAL062D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM195GAL062D transistor as follows.

SKM195GAL062D Transistor Specification

Transistor Code		SKM195GAL062D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	700W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	195A
Operating Junction Temperature (Maximum)		150 oC

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