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DM2G100SH6N IGBT Transistor

The DM2G100SH6N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the DM2G100SH6N transistor as follows.

Circuit diagram symbol of the DM2G100SH6N transistor

DM2G100SH6N Transistor Specification

Transistor Code DM2G100SH6N
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package 7DM-1
Collector Power Dissipation (Maximum) Pc 480W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 950
Rise Time 50

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