DM2G100SH6N IGBT Transistor

The DM2G100SH6N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the DM2G100SH6N transistor as follows.

DM2G100SH6N Transistor Specification

Transistor Code		DM2G100SH6N
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		7DM-1
Collector Power Dissipation (Maximum)	Pc	480W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		950
Rise Time		50

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