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SGF80N60UF IGBT Transistor

The SGF80N60UF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGF80N60UF transistor as follows.

Circuit diagram symbol of the SGF80N60UF transistor

SGF80N60UF Transistor Specification

Transistor Code SGF80N60UF
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3PF
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 70

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