SG20N12DT IGBT Transistor

The SG20N12DT is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SG20N12DT transistor as follows.

SG20N12DT Transistor Specification

Transistor Code		SG20N12DT
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247AD
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		90
Rise Time		20

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