RJP60F0DPM IGBT Transistor

The RJP60F0DPM is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJP60F0DPM transistor as follows.

RJP60F0DPM Transistor Specification

Transistor Code		RJP60F0DPM
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PFM
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.4V
Collector Current (Maximum)	IC	50A
Rise Time		90

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