RJH60V3BDPE IGBT Transistor

The RJH60V3BDPE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH60V3BDPE transistor as follows.

RJH60V3BDPE Transistor Specification

Transistor Code		RJH60V3BDPE
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	113W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	35A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		60
Rise Time		20

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