RJH1CV5DPK IGBT Transistor

The RJH1CV5DPK is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH1CV5DPK transistor as follows.

RJH1CV5DPK Transistor Specification

Transistor Code		RJH1CV5DPK
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector Power Dissipation (Maximum)	Pc	245W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		70
Rise Time		24

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