AOTF5B60D IGBT Transistor

The AOTF5B60D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the AOTF5B60D transistor as follows.

AOTF5B60D Transistor Specification

Transistor Code		AOTF5B60D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220F
Collector Power Dissipation (Maximum)	Pc	31.2W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.55V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		34
Rise Time		15

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