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AOTF5B60D IGBT Transistor

The AOTF5B60D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the AOTF5B60D transistor as follows.

Circuit diagram symbol of the AOTF5B60D transistor

AOTF5B60D Transistor Specification

Transistor Code AOTF5B60D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220F
Collector Power Dissipation (Maximum) Pc 31.2W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.55V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 34
Rise Time 15

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