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APT43GA90BD30 IGBT Transistor

The APT43GA90BD30 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT43GA90BD30 transistor as follows.

Circuit diagram symbol of the APT43GA90BD30 transistor

APT43GA90BD30 Transistor Specification

Transistor Code APT43GA90BD30
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 337W
Collector-Emitter Voltage (Maximum) VCE 900V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 43A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 227
Rise Time 16

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