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MSAHX75L60C IGBT Transistor

The MSAHX75L60C is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MSAHX75L60C transistor as follows.

Circuit diagram symbol of the MSAHX75L60C transistor

MSAHX75L60C Transistor Specification

Transistor Code MSAHX75L60C
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SMD-P
Collector Power Dissipation (Maximum) Pc 300W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 4000pF
Rise Time 50

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