MMG600KR120U IGBT Transistor

The MMG600KR120U is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG600KR120U transistor as follows.

MMG600KR120U Transistor Specification

Transistor Code		MMG600KR120U
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	3125W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	600A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		2820
Rise Time		60

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