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MMG100SR120B IGBT Transistor

The MMG100SR120B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MMG100SR120B transistor as follows.

Circuit diagram symbol of the MMG100SR120B transistor

MMG100SR120B Transistor Specification

Transistor Code MMG100SR120B
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 690W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 520
Rise Time 60

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