MIAA10WE600TMH IGBT Transistor

The MIAA10WE600TMH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the MIAA10WE600TMH transistor as follows.

MIAA10WE600TMH Transistor Specification

Transistor Code		MIAA10WE600TMH
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MINIPACK_2
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	18A

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