SGB10N60A IGBT Transistor

The SGB10N60A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SGB10N60A transistor as follows.

SGB10N60A Transistor Specification

Transistor Code		SGB10N60A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK(TO263)
Collector Power Dissipation (Maximum)	Pc	92W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.3V
Collector Current (Maximum)	IC	20A

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