KGT12N120NDH IGBT Transistor

The KGT12N120NDH is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the KGT12N120NDH transistor as follows.

KGT12N120NDH Transistor Specification

Transistor Code		KGT12N120NDH
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P(N)E
Collector Power Dissipation (Maximum)	Pc	176W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	24A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		50pF
Rise Time		18

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