IXXH60N65B4H1 IGBT Transistor

The IXXH60N65B4H1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXXH60N65B4H1 transistor as follows.

IXXH60N65B4H1 Transistor Specification

Transistor Code		IXXH60N65B4H1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	380W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	116A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		223
Rise Time		80

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