IXGQ50N60B4D1 IGBT Transistor

The IXGQ50N60B4D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGQ50N60B4D1 transistor as follows.

IXGQ50N60B4D1 Transistor Specification

Transistor Code		IXGQ50N60B4D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	100A
Rise Time		80

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