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IXGH60N30C3 IGBT Transistor

The IXGH60N30C3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGH60N30C3 transistor as follows.

Circuit diagram symbol of the IXGH60N30C3 transistor

IXGH60N30C3 Transistor Specification

Transistor Code IXGH60N30C3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 300V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 420A
Rise Time 68

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