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IXBH10N300HV IGBT Transistor

The IXBH10N300HV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXBH10N300HV transistor as follows.

Circuit diagram symbol of the IXBH10N300HV transistor

IXBH10N300HV Transistor Specification

Transistor Code IXBH10N300HV
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 180W
Collector-Emitter Voltage (Maximum) VCE 3000V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.8V
Collector Current (Maximum) IC 34A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 42
Rise Time 340

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