IXA27IF1200HJ IGBT Transistor

The IXA27IF1200HJ is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXA27IF1200HJ transistor as follows.

IXA27IF1200HJ Transistor Specification

Transistor Code		IXA27IF1200HJ
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOLATED 2(C) (G) 1
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	43A
Rise Time		100

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