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IRG8P40N120KD IGBT Transistor

The IRG8P40N120KD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG8P40N120KD transistor as follows.

Circuit diagram symbol of the IRG8P40N120KD transistor

IRG8P40N120KD Transistor Specification

Transistor Code IRG8P40N120KD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 305W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 60A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 140
Rise Time 20

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