GT8G151 IGBT Transistor

The GT8G151 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT8G151 transistor as follows.

GT8G151 Transistor Specification

Transistor Code		GT8G151
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TSON8
Collector Power Dissipation (Maximum)	Pc	0.83W
Collector-Emitter Voltage (Maximum)	VCE	400V
Gate-Emitter Voltage (Maximum)	VGE	4V
Collector-Emitter Saturation Voltage	VCE(on)	2.65V
Collector Current (Maximum)	IC	150(pulse)A
Operating Junction Temperature (Maximum)		150 oC

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