IKD10N60RF IGBT Transistor

The IKD10N60RF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IKD10N60RF transistor as follows.

IKD10N60RF Transistor Specification

Transistor Code		IKD10N60RF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		37
Rise Time		15

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