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STGWA25M120DF3 IGBT Transistor

The STGWA25M120DF3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGWA25M120DF3 transistor as follows.

Circuit diagram symbol of the STGWA25M120DF3 transistor

STGWA25M120DF3 Transistor Specification

Transistor Code STGWA25M120DF3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 375W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 25A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 180
Rise Time 15

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