IGC11T120T8L IGBT Transistor

The IGC11T120T8L is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC11T120T8L transistor as follows.

IGC11T120T8L Transistor Specification

Transistor Code		IGC11T120T8L
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.07V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)		175 oC

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