IGC06R60DE IGBT Transistor

The IGC06R60DE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC06R60DE transistor as follows.

IGC06R60DE Transistor Specification

Transistor Code		IGC06R60DE
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		46

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