HIL40N120VF IGBT Transistor

The HIL40N120VF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HIL40N120VF transistor as follows.

HIL40N120VF Transistor Specification

Transistor Code		HIL40N120VF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector Power Dissipation (Maximum)	Pc	500W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	64A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		295
Rise Time		65

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