HGTP12N60B3 IGBT Transistor

The HGTP12N60B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTP12N60B3 transistor as follows.

HGTP12N60B3 Transistor Specification

Transistor Code		HGTP12N60B3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	27A
Operating Junction Temperature (Maximum)		150 oC

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