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HGTP10N40F1D IGBT Transistor

The HGTP10N40F1D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTP10N40F1D transistor as follows.

Circuit diagram symbol of the HGTP10N40F1D transistor

HGTP10N40F1D Transistor Specification

Transistor Code HGTP10N40F1D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector Power Dissipation (Maximum) Pc 75W
Collector-Emitter Voltage (Maximum) VCE 400V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 12A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 45

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