GT60N321 IGBT Transistor

The GT60N321 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT60N321 transistor as follows.

GT60N321 Transistor Specification

Transistor Code		GT60N321
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		2-21F2C
Collector Power Dissipation (Maximum)	Pc	170W
Collector-Emitter Voltage (Maximum)	VCE	1000V
Gate-Emitter Voltage (Maximum)	VGE	25V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		230

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