GT40J322 IGBT Transistor

The GT40J322 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT40J322 transistor as follows.

GT40J322 Transistor Specification

Transistor Code		GT40J322
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		2-16C1C
Collector Power Dissipation (Maximum)	Pc	120W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	25V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		150 oC

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