GT15Q311 IGBT Transistor

The GT15Q311 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT15Q311 transistor as follows.

GT15Q311 Transistor Specification

Transistor Code		GT15Q311
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		DPAK
Collector Power Dissipation (Maximum)	Pc	130W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	2.8V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		320

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