FGW85N60RB(85G60RB) IGBT Transistor

The FGW85N60RB(85G60RB) is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGW85N60RB(85G60RB) transistor as follows.

FGW85N60RB(85G60RB) Transistor Specification

Transistor Code		FGW85N60RB(85G60RB)
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	600W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.45V
Collector Current (Maximum)	IC	85A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		1150
Rise Time		85

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