FF150R12MS4G IGBT Transistor

The FF150R12MS4G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FF150R12MS4G transistor as follows.

FF150R12MS4G Transistor Specification

Transistor Code		FF150R12MS4G
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	1250W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.2V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		60

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