The FF150R12MS4G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.
Circuit diagram symbol of the FF150R12MS4G transistor as follows.
|IGBT Control Channel Type
|Collector Power Dissipation (Maximum)
|Collector-Emitter Voltage (Maximum)
|Gate-Emitter Voltage (Maximum)
|Collector-Emitter Saturation Voltage
|Collector Current (Maximum)
|Operating Junction Temperature (Maximum)
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