FD600R12IP4D IGBT Transistor

The FD600R12IP4D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FD600R12IP4D transistor as follows.

FD600R12IP4D Transistor Specification

Transistor Code		FD600R12IP4D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	3350W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	600A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		120

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