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APT80GA60B IGBT Transistor

The APT80GA60B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT80GA60B transistor as follows.

Circuit diagram symbol of the APT80GA60B transistor

APT80GA60B Transistor Specification

Transistor Code APT80GA60B
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 625W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 80A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 580
Rise Time 27

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