HGTG12N60C3DR IGBT Transistor

The HGTG12N60C3DR is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTG12N60C3DR transistor as follows.

HGTG12N60C3DR Transistor Specification

Transistor Code		HGTG12N60C3DR
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	24A
Operating Junction Temperature (Maximum)		150 oC

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