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APT35GN120SG IGBT Transistor

The APT35GN120SG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT35GN120SG transistor as follows.

Circuit diagram symbol of the APT35GN120SG transistor

APT35GN120SG Transistor Specification

Transistor Code APT35GN120SG
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268AB
Collector Power Dissipation (Maximum) Pc 379W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 94A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 150
Rise Time 22

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