APT30GS60SRDQ2G IGBT Transistor

The APT30GS60SRDQ2G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT30GS60SRDQ2G transistor as follows.

APT30GS60SRDQ2G Transistor Specification

Transistor Code		APT30GS60SRDQ2G
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268AB
Collector Power Dissipation (Maximum)	Pc	250W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	3.25V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		140
Rise Time		29

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