ZXM66P02N8TC MOSFET Transistor

The ZXM66P02N8TC is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZXM66P02N8TC transistor as follows.

ZXM66P02N8TC Transistor Specification

Transistor Code		ZXM66P02N8TC
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SO-8
Transistor SMD Code		ZXM66P02
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	6.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	1.56W
Drain-Source Capacitance		1038pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		44.3nS
Gate-Threshold Voltage (Maximum)		0.7V

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