STS4DNFS30 MOSFET Transistor

The STS4DNFS30 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STS4DNFS30 transistor as follows.

STS4DNFS30 Transistor Specification

Transistor Code		STS4DNFS30
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Transistor SMD Code		S4DNFS30
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.055Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		115pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		4.7nC

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