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WVM8N60 MOSFET Transistor

The WVM8N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WVM8N60 transistor as follows.

Circuit diagram symbol of the WVM8N60 transistor

WVM8N60 Transistor Specification

Transistor Code WVM8N60
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.5Ohm
Power Dissipation (Maximum) PD 150W
Operating Junction Temperature (Maximum) 150°C
Rise Time 160nS
Gate-Threshold Voltage (Maximum) 4V

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