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WVM30N10 MOSFET Transistor

The WVM30N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WVM30N10 transistor as follows.

Circuit diagram symbol of the WVM30N10 transistor

WVM30N10 Transistor Specification

Transistor Code WVM30N10
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 30A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.1Ohm
Power Dissipation (Maximum) PD 150W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V

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