WFD20N06 MOSFET Transistor

The WFD20N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WFD20N06 transistor as follows.

WFD20N06 Transistor Specification

Transistor Code		WFD20N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.039Ohm
Power Dissipation (Maximum)	PD	36W
Drain-Source Capacitance		68pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12.6nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		7.6nC

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