IRFR9310PBF MOSFET Transistor

The IRFR9310PBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR9310PBF transistor as follows.

IRFR9310PBF Transistor Specification

Transistor Code		IRFR9310PBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	7Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		50pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		13nC

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