UTT100N06 MOSFET Transistor

The UTT100N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the UTT100N06 transistor as follows.

UTT100N06 Transistor Specification

Transistor Code		UTT100N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		1060pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		130nS

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