RU65120R MOSFET Transistor

The RU65120R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RU65120R transistor as follows.

RU65120R Transistor Specification

Transistor Code		RU65120R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	65V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0065Ohm
Power Dissipation (Maximum)	PD	188W
Drain-Source Capacitance		450pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		46nS
Gate-Threshold Voltage (Maximum)		4V

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