TPCS8006 MOSFET Transistor

The TPCS8006 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPCS8006 transistor as follows.

TPCS8006 Transistor Specification

Transistor Code		TPCS8006
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSSOP8
Transistor SMD Code		S8006
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		105pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS

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