TMU7N65Z MOSFET Transistor

The TMU7N65Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMU7N65Z transistor as follows.

TMU7N65Z Transistor Specification

Transistor Code		TMU7N65Z
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I-PAK
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		33nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		27nC

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