FQU1N60CTU MOSFET Transistor

The FQU1N60CTU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQU1N60CTU transistor as follows.

FQU1N60CTU Transistor Specification

Transistor Code		FQU1N60CTU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I-PAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	11.5Ohm
Power Dissipation (Maximum)	PD	28W
Drain-Source Capacitance		19pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		21nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		4.8nC

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